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 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS(on)= 1 * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers * Stepper motor driver
ZVN4206AV
D G
S
E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot I SD I AR E AR T j:T stg VALUE 60 600 8 20 700 600 600 15 -55 to +150 UNIT V mA A V mW mA mA mJ C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Continuous Body Diode Current at T amb =25C Avalanche Current - Repetitive Avalanche Energy - Repetitive Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. 60 1.3 3 100 10 100 3 1 1.5 300 100 60 20 8 12 12 15 MAX. UNIT CONDITIONS. V V nA A A A mS pF pF pF ns ns ns ns V DD 25V, I D=1.5A,V GEN=10V V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=1.5A V GS=5V,I D=.0.5A V DS=25V,I D=1.5A Drain-Source Breakdown Voltage BV DSS Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS I D(on) R DS(on)
Forward Transconductance(1)(2) g fs Input Capacitance (2) Common Source Output Capacitance (2) C iss C oss
Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
ZVN4206AV
TYPICAL CHARACTERISTICS
10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 2 6V 5V 4.5V 4V 3.5V 50 10 VGS= 20V 16V 14V 12V 10V 9V 8V 7V 6V 5V 4.5V 4V 3.5V 10
ID - Drain Current (Amps)
6
ID - Drain Current (Amps)
8
8 6
4
4
2
0 0 10 20 30 40
0 2 4 6 8
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
VDS-Drain Source Voltage (Volts)
10
ID - Drain Current (Amps)
6 VDS=10V 4
8 6
4 ID= 3A 1.5A 0.5A 0 2 4 6 8 10
2
2
0
0 0 2 4 6 8 10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
RDS(on)-Drain Source On Resistance ()
10
VGS=3.5V
4.5V
6V
8V 10V 2.6
Normalised RDS(on) and VGS(th)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25
n) (o
VGS=10V ID=1.5A
14V 1.0 20V 20V
Dr
e eR rc ou -S ain
eR nc ta sis
DS
VGS=VDS ID=1mA
Gate Threshold Voltage VGS(TH)
0.1 0.1 1.0 10
0
25 50 75 100 125 150 175 200 225
ID-Drain Current (Amps)
Tj-Junction Temperature (C)
On-resistance v drain current
Normalised RDS(on) and VGS(th) v Temperature
ZVN4206AV
TYPICAL CHARACTERISTICS
1000 1000
gfs-Transconductance (mS)
700 600 500 400 300 200 100 0 0 1 2
gfs-Transconductance (mS)
900 800 VDS=10V
900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VDS=10V
3
4
5
6
7
8
9
10
ID- Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
VDS= 20V 40V 60V ID=1.5A
VGS-Gate Source Voltage (Volts)
200
16 14 12 10 8 6 4 2 0
C-Capacitance (pF)
160 120 80 Ciss 40 Coss 0 0 10 20 30 40 50 60 Crss 70 80
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
EAR- Repetative Avalance Energy (mJ)
Tj - Junction Temperature (C)
IAR- Repetative Avalance Current (A)
Tj - Junction Temperature (C)
Maximum repetative avalanche energy v Junction Temperature
Maximum repetative avalanche current v Junction Temperature


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